Through substrate via structures and methods of forming the same
US8803322B2 · kind B2 · utility
5Cited by
34References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2011 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Oct 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The embodiments of forming a through substrate via (TSV) structure described enable reducing risk of damaging gate structures due to over polishing of an inter-level dielectric layer (ILD) layer. The TSV structure with a wider opening near one end also enables better gapfill.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.