Method and apparatus for selective nitridation process
US8808564B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2012 |
| Grant date | Aug 19, 2014 |
| Priority date | — |
| Expiry date | Jan 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein generally relate to methods for manufacturing flash memory devices. In one embodiment, a method for removing native oxides from a substrate is provided. The method includes transferring a substrate having an oxide layer disposed thereon into a first processing chamber, exposing the substrate to a plasma generated from a cleaning gas mixture, wherein the cleaning gas mixture comprises a hydrogen-containing gas and a fluorine-containing gas, heating the substrate to a temperature sufficient to remove the oxide layer from the substrate, transferring the substrate from the first processing chamber to a second processing chamber without breaking vacuum, and flowing a plasma containing substantially nitrogen-containing radicals into the second processing chamber to expose the substrate to nitrogen containing radicals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.