Method for implementing deep trench enabled high current capable bipolar transistor for current switching and output driver applications
US8809156B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2013 |
| Grant date | Aug 19, 2014 |
| Priority date | — |
| Expiry date | Jan 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and structures are provided for implementing deep trench enabled high current capable bipolar transistor for current switching and output driver applications. A deep oxygen implant is provided in a selected region of substrate. A first deep trench and second deep trench are formed above the deep oxygen implant. The first deep trench is a generally large rectangular box deep trench of minimum width and the second deep trench is a second small area deep trench centered within the first rectangular box deep trench. Ion implantation at relatively high ion pressure and annealing is utilized to form highly doped N+ regions or P+ regions both inside and outside the outside the first deep trench and around the outside the second deep trench region. These regions provide the collector and emitter respectively, and the existing substrate region provides the base region between the collector and emitter regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.