High throughput cyclical epitaxial deposition and etch process
US8809170B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 19, 2011 |
| Grant date | Aug 19, 2014 |
| Priority date | — |
| Expiry date | Nov 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of selective formation leave high quality epitaxial material using a repeated deposition and selective etch process. During the deposition process, an inert carrier gas is provided with a silicon-containing source without hydrogen carrier gas. After depositing silicon-containing material, an inert carrier gas is provided with an etchant to selectively etch deposited material without hydrogen. The deposition and etch processes can be repeated until a desired thickness of silicon-containing material is achieved. Using the processes described within, it is possible to maintain temperature and pressure conditions, as well as inert carrier gas flow rates, to provide for increased throughput. The inert flow can be constant, or etch rates can be increased by reducing inert flow for the etch phases of the cycles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.