Small footprint phase change memory cell

US8809828B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• MACRONIX INTERNATIONAL CO., LTD. · TW

Inventors

• Matthew J. Breitwisch · Yorktown Heights, US
• Eric A. Joseph · White Plains, US
• Chung H. Lam · Williston, US
• Hsiang-Lan Lung · Ardsley, US

Key dates

• Filing date: Feb 13, 2014
• Grant date: Aug 19, 2014
• Expiry date: Feb 13, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/063

Abstract

An example embodiment disclosed is a phase change memory cell in a semiconductor wafer. The semiconductor wafer includes a first metalization layer (Metal 1). The phase change memory cell includes an insulating substrate defining a non-sublithographic via. The non-sublithographic via is located on the first metalization layer and includes a bottom and a sidewall. Intermediate insulating material is positioned below the insulating substrate. The intermediate insulating material defines a sublithographic aperture passing through the bottom of the non-sublithographic via. A bottom electrode is positioned within the sublithographic aperture, and is composed of conductive non-phase change material. The non-sublithographic via includes phase change material positioned within. The phase change material is electrically coupled to the bottom electrode. A liner is positioned along the sidewall of the non-sublithographic via. The liner is electrically coupled to the phase change material and is composed of the conductive non-phase change material.