Thin film metal-dielectric-metal transistor
US8809861B2 · kind B2 · utility
1Cited by
77References
14Claims
0Family size
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Key dates
| Filing date | Dec 29, 2010 |
| Grant date | Aug 19, 2014 |
| Priority date | — |
| Expiry date | Oct 5, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/902
Abstract
A transistor is formed having a thin film metal channel region. The transistor may be formed at the surface of a semiconductor substrate, an insulating substrate, or between dielectric layers above a substrate. A plurality of transistors each having a thin film metal channel region may be formed. Multiple arrays of such transistors can be vertically stacked in a same device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.