Fin held effect transistor

US8809940B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Hung-Ta Lin · Hsinchu, TW
• Chu-Yun Fu · Hsinchu, TW
• Shin-Yeh Huang · Hsinchu, TW
• Shu-Tine Yang · Zhubei City, TW
• Hung-Ming Chen · Zhubei City, TW

Key dates

• Filing date: Apr 9, 2013
• Grant date: Aug 19, 2014
• Expiry date: Apr 9, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A FinFET is described, the FinFET includes a substrate including a top surface and a first insulation region and a second insulation region over the substrate top surface comprising tapered top surfaces. The FinFET further includes a fin of the substrate extending above the substrate top surface between the first and second insulation regions, wherein the fin includes a recessed portion having a top surface lower than the tapered top surfaces of the first and second insulation regions, wherein the fin includes a non-recessed portion having a top surface higher than the tapered top surfaces. The FinFET further includes a gate stack over the non-recessed portion of the fin.