Method for patterning a photosensitive layer
US8815496B2 · kind B2 · utility
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4References
20Claims
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Key dates
| Filing date | Feb 22, 2013 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Feb 22, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0035
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The method of patterning a photosensitive layer includes providing a substrate including a first layer formed thereon, treating the substrate including the first layer with cations, forming a first photosensitive layer over the first layer, patterning the first photosensitive layer to form a first pattern, treating the first pattern with cations, forming a second photosensitive layer over the treated first pattern, patterning the second photosensitive layer to form a second pattern, and processing the first layer using the first and second patterns as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.