Method of processing MIM capacitors to reduce leakage current

US8815677B2 · kind B2 · utility

Assignees

• INTERMOLECULAR, INC. · US
• ELPIDA MEMORY, INC. · JP

Inventors

• Hanhong Chen · Milpitas, US
• Wim Deweerd · San Jose, US
• Xiangxin Rui · Campbell, US
• Sandra G. Malhotra · San Jose, US
• Hiroyuki Ode · Kure, JP

Key dates

• Filing date: Jun 14, 2011
• Grant date: Aug 26, 2014
• Expiry date: Jun 7, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/68

Abstract

A method for processing dielectric materials and electrodes to decrease leakage current is disclosed. The method includes a post dielectric anneal treatment in an oxidizing atmosphere to reduce the concentration of oxygen vacancies in the dielectric material. The method further includes a post metallization anneal treatment in an oxidizing atmosphere to reduce the concentration of interface states at the electrode/dielectric interface and to further reduce the concentration of oxygen vacancies in the dielectric material.