Methods to improve leakage for ZrO2 based high K MIM capacitor

US8815695B2 · kind B2 · utility

Assignees

• INTERMOLECULAR, INC. · US
• ELPIDA MEMORY, INC. · JP

Inventors

• Xiangxin Rui · Campbell, US
• Mitsuhiro Horikawa · Tokyo, JP
• Hiroyuki Ode · Kure, JP
• Karthik Ramani · West Lafayette, US

Key dates

• Filing date: Dec 27, 2012
• Grant date: Aug 26, 2014
• Expiry date: Dec 27, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/694

Abstract

A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive base layer and conductive metal oxide layer. A second electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the second electrode layer contains a conductive base layer and conductive metal oxide layer. In some embodiments, both the first electrode layer and the second electrode layer contain a conductive base layer and conductive metal oxide layer.