Chemical vapor deposition with energy input
US8815709B2 · kind B2 · utility
2Cited by
25References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2009 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Sep 13, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/406
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of depositing compound semiconductors onto substrates are disclosed, including directing gaseous reactants into a reaction chamber containing the substrates, selectively supplying energy to one of the gaseous reactants in order to impart sufficient energy to activate that reactant but insufficient to decompose the reactant, and then decomposing the reactant at the surface of the substrate in order to react with the other reactants. The preferred energy source is microwave or infrared radiation, and reactors for carrying out these methods are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.