Semiconductor device and method of manufacturing the same
US8815735B2 · kind B2 · utility
0Cited by
8References
5Claims
0Family size
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Key dates
| Filing date | May 3, 2012 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | May 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
Abstract
A semiconductor device comprises a substrate, a dielectric layer, an undoped silicon layer, and a silicon material. The substrate comprises a doped region. The dielectric layer is formed on the substrate and comprises a contact hole, and the contact hole corresponds to the doped region. The undoped silicon layer is formed on the doped region. The silicon material fills the contact hole from the undoped silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.