Patent · US Active

Method of forming a semiconductor structure including an implantation of ions into a layer of spacer material

US8815741B1 · kind B1 · utility

10Cited by

0References

20Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Ralf Richter · Dresden, DE
Jan Hoentschel · Dresden, DE
Sven Beyer · Dresden, DE
Peter Javorka · Radebeul, DE

Key dates

Filing date	Mar 11, 2013
Grant date	Aug 26, 2014
Priority date	—
Expiry date	Mar 11, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method includes providing a semiconductor structure including a substrate and a transistor element. A layer of a spacer material is deposited over the substrate and the gate structure, wherein the deposited layer of spacer material has an intrinsic stress. Ions are implanted into the layer of spacer material. After the deposition of the layer of spacer material and the implantation of ions into the layer of spacer material, a sidewall spacer is formed at sidewalls of the gate structure from the layer of spacer material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.