Patent · US Active

Through substrate via semiconductor components and methods of formation thereof

US8815743B2 · kind B2 · utility

2Cited by

13References

14Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Albert Birner · Regensburg, DE
Uwe Hoeckele · Regensburg, DE
Thomas Kunstmann · Hemau, DE
Uwe Seidel · Munich, DE

Key dates

Filing date	Mar 14, 2013
Grant date	Aug 26, 2014
Priority date	—
Expiry date	Mar 14, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/01079
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A structure and method of forming through substrate vias in forming semiconductor components are described. In one embodiment, the invention describes a method of forming the through substrate via by filling an opening with a first fill material and depositing a first insulating layer over the first fill material, the first insulating layer not being deposited on sidewalls of the fill material in the opening, wherein sidewalls of the first insulating layer form a gap over the opening. The method further includes forming a void by sealing the opening using a second insulating layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.