Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US8816315B2 · kind B2 · utility
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24Claims
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Key dates
| Filing date | Feb 11, 2013 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Feb 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
Abstract
A memory cell is provided that includes a reversible resistance-switching element above a substrate. The reversible resistance-switching element includes an etched material layer that includes an oxidized layer of the etched material layer above a non-oxidized layer of the etched material layer. Numerous other aspects are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.