Method of fabricating heterojunction photodiodes with CMOS

US8816443B2 · kind B2 · utility

Assignee

• Quantum Semiconductor LLP · US

Inventors

• Carlos Augusto · San Jose, US
• Lynn Forester · San Jose, US

Key dates

• Filing date: Jul 23, 2007
• Grant date: Aug 26, 2014
• Expiry date: Mar 6, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/8057

Abstract

An epitaxial device module monolithically integrated with a CMOS structure in a bulk or thick-film SOI substrate, comprising an active area on which epitaxial layers are formed by selective or non-selective epitaxial growth and a separate active area in which the CMOS structure is formed. A hard mask for epitaxy having an opening therein provides self-alignment for optional ion implants into the substrate. The ion-implanted region overlaps the active region underneath the epitaxial layer, a portion of the source/drain region of the CMOS structure and the isolation region separating the two active areas, thereby establishing a conductive path underneath the isolation region between the two active areas.