Independently voltage controlled volume of silicon on a silicon on insulator chip

US8816470B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Karl R. Erickson · Rochester, US
• Phil C. Paone · Rochester, US
• David P. Paulsen · Dodge Center, US
• John E. Sheets, II · Zumbrota, US
• Gregory J. Uhlmann · Rochester, US
• Kelly L. Williams · Rochester, US

Key dates

• Filing date: Apr 21, 2011
• Grant date: Aug 26, 2014
• Expiry date: Apr 21, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/378
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor chip has an independently voltage controlled silicon region that is a circuit element useful for controlling capacitor values of eDRAM trench capacitors and threshold voltages of field effect transistors overlying the independently voltage controlled silicon region. A bottom, or floor, of the independently voltage controlled silicon region is a deep implant of opposite doping to a doping of a substrate of the independently voltage controlled silicon region. A top, or ceiling, of the independently voltage controlled silicon region is a buried oxide implant in the substrate. Sides of the independently voltage controlled silicon region are deep trench isolation. Voltage of the independently voltage controlled silicon region is applied through a contact structure formed through the buried oxide.