Charge pump control scheme using frequency modulation for memory word line
US8817553B2 · kind B2 · utility
9Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2011 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Sep 21, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory includes a word line having a word line voltage, a charge pump coupled to the word line, and a dynamic feedback control circuit coupled to the charge pump. The dynamic feedback control circuit is capable of changing a clock frequency of a clock signal supplied the charge pump from a first non-zero value to a second non-zero value depending on the difference between the word line voltage and a target threshold voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.