Activated silicon precursors for low temperature deposition
US8821986B2 · kind B2 · utility
16Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2012 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Mar 9, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/505
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided are processes for the low temperature deposition of silicon-containing films using activated SiH-containing precursors. The SiH-containing precursors may have reactive functionality such as halogen or cyano moieties. Described are processes in which halogenated or cyanated silanes are used to deposit SiN films. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.