Field-effect transistor and method of creating same
US8823090B2 · kind B2 · utility
5Cited by
10References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 17, 2011 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Sep 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field-effect transistor has a gate, a source, and a drain. The gate has a via extending through a semiconductor chip substrate from one surface to an opposite surface of the semiconductor chip substrate. The source has a first toroid of ion dopants implanted in the semiconductor chip substrate surrounding one end of the via on the one surface of the semiconductor chip substrate. The drain has a second toroid of ion dopants implanted in the semiconductor chip substrate surrounding an opposite end of the via on the opposite surface of the semiconductor chip substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.