Silicon epitaxial wafer, method for manufacturing the same, bonded SOI wafer and method for manufacturing the same
US8823130B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2011 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Mar 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon epitaxial wafer having a silicon epitaxial layer grown by vapor phase epitaxy on a main surface of a silicon single crystal substrate, wherein the main surface of the silicon single crystal substrate is tilted with respect to a [100] axis at an angle θ in a [011] direction or a [0-1-1] direction from a (100) plane and at an angle φ in a [01-1] direction or a [0-11] direction from the (100) plane, the angle θ and the angle φ are less than ten minutes, and a dopant concentration of the silicon epitaxial layer is equal to or more than 1×1019/cm3. Even when an epitaxial layer having a dopant concentration of 1×1019/cm3 or more is formed on the main surface of the silicon single crystal substrate, stripe-shaped surface irregularities on the epitaxial layer are inhibited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.