GaN vertical bipolar transistor
US8823140B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2012 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Nov 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/281
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of a semiconductor device includes a III-nitride base structure of a first conductivity type, and a III-nitride emitter structure of a second conductivity type having a first surface and a second surface. The second surface is substantially opposite the first surface. The first surface of the III-nitride emitter structure is coupled to a surface of the III-nitride base structure. The semiconductor also includes a first dielectric layer coupled to the second surface of the III-nitride emitter structure, and a spacer coupled to a sidewall of the III-nitride emitter structure and the surface of the III-nitride base structure. The semiconductor also includes a base contact structure with a III-nitride material coupled to the spacer, the surface of the III-nitride base structure, and the first dielectric layer, such that the first dielectric layer and the spacer are disposed between the base contact structure and the III-nitride emitter structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.