Dave P. Bour
10Patents
2h-index
11Co-inventors
47Inventor score
Filing activity: Feb 3, 2003 → Feb 13, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8823140B2 | GaN vertical bipolar transistor | Electricity | 5 | Active |
| US6822274B2 | Heterojunction semiconductor device having an intermediate layer for providing an improved junction | Electricity | 3 | Expired |
| US10347736B2 | High power gallium nitride electronics using miscut substrates | Electricity | 1 | Active |
| US9006800B2 | Ingan ohmic source contacts for vertical power devices | Electricity | 1 | Active |
| US10854727B2 | High power gallium nitride electronics using miscut substrates | Electricity | 0 | Active |
| US10566439B2 | High power gallium nitride electronics using miscut substrates | Electricity | 0 | Active |
| US9472684B2 | Lateral GaN JFET with vertical drift region | Electricity | 0 | Active |
| US9159799B2 | Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer | Electricity | 0 | Active |
| US9525039B2 | Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer | Electricity | 0 | Active |
| US9508838B2 | InGaN ohmic source contacts for vertical power devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.