Self-referenced magnetic random access memory cells
US8824202B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2010 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Jan 5, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure concerns a magnetic random access memory cell containing a magnetic tunnel junction formed from an insulating layer comprised between a sense layer and a storage layer. The present disclosure also concerns a method for writing and reading the memory cell comprising, during a write operation, switching a magnetization direction of said storage layer to write data to said storage layer and, during a read operation, aligning magnetization direction of said sense layer in a first aligned direction and comparing said write data with said first aligned direction by measuring a first resistance value of said magnetic tunnel junction. The disclosed memory cell and method allow for performing the write and read operations with low power consumption and an increased speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.