Single-crystal phase change material on insulator for reduced cell variability
US8828785B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2012 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Mar 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Techniques for producing a single-crystal phase change material and the incorporation of those techniques in an electronic device fabrication process flow are provided. In one aspect, a method of fabricating an electronic device is provided which includes the following steps. A single-crystal phase change material is formed on a first substrate. At least one first electrode in contact with a first side of the single-crystal phase change material is formed. The single-crystal phase change material and the at least one first electrode in contact with the first side of the single-crystal phase change material form a transfer structure on the first substrate. The transfer structure is transferred to a second substrate. At least one second electrode in contact with a second side of the single-crystal phase change material is formed. A single-crystal phase change material-containing structure and electronic device are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.