Patent · US Active

Semiconductor device and method

US8828804B2 · kind B2 · utility

2Cited by

6References

7Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Ivan Nikitin · Regensburg, DE
Alexander Heinrich · Bad Abbach, DE
Stefan Landau · Usingen, DE

Key dates

Filing date	Apr 30, 2008
Grant date	Sep 9, 2014
Priority date	—
Expiry date	Apr 26, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An electronic device and fabrication of an electronic device. One embodiment provides applying a paste including electrically conductive particles to a surface of a semiconductor wafer. The semiconductor wafer is singulated with the electrically conductive particles for obtaining a plurality of semiconductor chips. At least one of the plurality of semiconductor chips is placed over a carrier with the electrically conductive particles facing the carrier. The electrically conductive particles are heated until the at least one semiconductor chip adheres to the carrier.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.