Delta-doping at wafer level for high throughput, high yield fabrication of silicon imaging arrays

US8828852B2 · kind B2 · utility

Assignee

• CALIFORNIA INSTITUTE OF TECHNOLOGY · US

Inventors

• Michael E. Hoenk · Pasadena, US
• Shoulch Nikzad · Valencia, US
• Todd J. Jones · Altadena, US
• Frank Greer · Pasadena, US
• Alexander G. Carver · Burbank, US

Key dates

• Filing date: Dec 10, 2010
• Grant date: Sep 9, 2014
• Expiry date: Apr 6, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3+NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.