Methods for depositing a tantalum silicon nitride film
US8828866B1 · kind B1 · utility
7Cited by
5References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 26, 2013 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Jun 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are methods of forming a ternary metal nitride film and more specifically, a TaSiN film. A metal nitride film, or TaN film, is deposited on a substrate with plasma treatment. A SiN layer is deposited on the metal nitride, or TaN, film to form a metal-SiN, or TaSiN, film. The film is then annealed to provide a metal nitride film with stable resistivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.