Plasma processing apparatus having hollow electrode on periphery and plasma control method
US8829387B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2011 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Dec 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32697
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
There is provided a plasma processing apparatus capable of performing a uniform plasma process on a substrate by controlling a plasma distribution within a chamber to a desired state and uniformizing a plasma density within the chamber. The plasma processing apparatus includes an evacuable chamber 11 for performing a plasma process on a wafer W; a susceptor 12 for mounting the wafer W within the chamber 11; an upper electrode plate 30a facing the susceptor 12 with a processing space S; a high frequency power supply 20 for applying a high frequency power to one of the susceptor 12 and the upper electrode plate 30a to generate plasma within the processing space S; and an inner wall member facing the processing space S. Hollow cathodes 31a to 31c are formed at the upper electrode plate 30a connected with a DC power supply 37 for adjusting a sheath voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.