Transistor with adjustable supply and/or threshold voltage
US8829620B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2012 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Aug 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
Abstract
The first electrode of the transistor may include a first electrically conductive region provided within the semiconductor substrate. The second electrode may include a second electrically conductive region provided within the semiconductor substrate. The first and second regions may be separated by the substrate region, and the control electrode may include a third electrically conductive region provided within the substrate. The third electrically conductive region may be both separated from the substrate region by an insulating region and electrically coupled to the substrate region by a junction diode intended to be reverse-biased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.