Low voltage fuse-based memory with high voltage sense amplifier
US8830779B1 · kind B1 · utility
2Cited by
3References
20Claims
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Key dates
| Filing date | Jun 24, 2013 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Jun 24, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A fuse-based memory includes a plurality of bit lines. Each bit lines couples to a corresponding plurality of fuses. The fuses couple to ground through corresponding access transistors. The memory is configured to precharge an accessed one of the bit lines and a reference one of the bit lines using a low voltage supply. In contrast, a resulting voltage difference between the accessed bit line and the reference bit line is sensed using a sense amplifier powered by a high voltage supply, wherein a high voltage supplied by the high power supply is greater than a low voltage supplied by the low voltage supply.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.