Process chamber having gate slit opening and closing apparatus
US8834673B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 10, 2007 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Aug 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/184
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process chamber is provided for an etching apparatus that etches a substrate, such as a liquid crystal display (LCD) substrate, using plasma. The process chamber may include a chamber body, in one wall of which a gate slit is formed, a rotary inner door that opens and closes an inner opening of the gate slit, and a door driving mechanism that rotates the inner door. When the substrate is etched, the inner door is closed preventing an interior of the chamber body from communicating with the gate slit. Thereby, a space in which the plasma is formed may be maintained symmetrical, so that the plasma may be uniformly distributed in an interior of the chamber body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.