High light extraction efficiency nitride based light emitting diode by surface roughening
US8835200B2 · kind B2 · utility
3Cited by
10References
22Claims
0Family size
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Key dates
| Filing date | Jan 12, 2012 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Sep 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.