Semiconductor process

US8835243B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Tzung-I Tsai · Tainan, TW
• Shui-Yen Lu · Tainan, TW

Key dates

• Filing date: May 4, 2012
• Grant date: Sep 16, 2014
• Expiry date: Aug 1, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/8311

Abstract

A semiconductor process includes the following steps. A first structure and a second structure are formed on a substrate. An oxide layer is entirely formed to cover the first structure and the second structure. A nitride layer is formed to entirely cover the oxide layer. A dry etching process is performed to remove a part of the nitride layer on the first structure. A wet etching process is performed to entirely remove the nitride layer and the oxide layer on the first structure and the second structure.