FinFET trench circuit

US8835250B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Jonathan E. Faltermeier · Delanson, US
• Veeraraghavan S. Basker · Schenectady, US
• Kangguo Cheng · Schenectady, US
• Theodorus E. Standaert · Clifton Park, US

Key dates

• Filing date: Sep 13, 2012
• Grant date: Sep 16, 2014
• Expiry date: Sep 15, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D87/00

Abstract

A finFET trench circuit is disclosed. FinFETs are integrated with trench capacitors by employing a trench top oxide over a portion of the trench conductor. A passing gate is then disposed over the trench top oxide to form a larger circuit, such as a DRAM array. The trench top oxide is formed by utilizing different growth rates between polysilicon and single crystal silicon.