High temperature ALD process of metal oxide for DRAM applications
US8835273B2 · kind B2 · utility
3Cited by
1References
18Claims
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Key dates
| Filing date | Sep 19, 2012 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Sep 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive metal oxide formed using a high temperature, low pressure ALD process. The high temperature ALD process results in a layer with enhanced crystallinity, higher density, reduced shrinkage, and lower carbon contamination. The high temperature ALD process can be used for either or both the bottom electrode and the top electrode layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.