Patent · US Active

Pre-sintered semiconductor die structure

US8835299B2 · kind B2 · utility

3Cited by

2References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Roland Speckels · Kamen, DE
Lars Böwer · Dortmund, DE
Nicolas Heuck · Lehre, DE
Niels Oeschler · Arnsberg, DE

Key dates

Filing date	Aug 29, 2012
Grant date	Sep 16, 2014
Priority date	—
Expiry date	Dec 14, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/13055
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A sintered connection is formed by pressing a semiconductor die against a substrate with a dried sintering material interposed between the substrate and the semiconductor die, the dried sintering material having sintering particles and a solvent. The substrate is heated to a temperature below a sintering temperature of the dried sintering material while the semiconductor die is pressed against the substrate to form local sinter connections between adjacent ones of the sintering particles. The local sinter connections collectively provide a stable joint that fixes the semiconductor die to the substrate prior to sintering. A sintered connection is then formed between the semiconductor die and the substrate from the dried sintering material, after the stable joint is formed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.