Patent · US Active

Protection layers for conductive pads and methods of formation thereof

US8835319B2 · kind B2 · utility

2Cited by

10References

34Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Dirk Meinhold · Dresden, DE
Norbert Mais · Nuremberg, DE
Reimund Engl · Munich, DE
Hans-Joerg Timme · Ottobrunn, DE
Alfred Vater · Dresden, DE
Stephan Henneck · Regensburg, DE
Norbert Urbansky · Dresden, DE

Key dates

Filing date	Mar 2, 2012
Grant date	Sep 16, 2014
Priority date	—
Expiry date	Sep 19, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In one embodiment, a method of forming a semiconductor device includes forming a metal line over a substrate and depositing an alloying material layer over a top surface of the metal line. The method further includes forming a protective layer by combining the alloying material layer with the metal line.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.