Titanium-nitride removal
US8835326B2 · kind B2 · utility
6Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2012 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Jul 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76804
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A chemical solution that removes undesired metal hard mask yet remains selective to the device wiring metallurgy and dielectric materials. The present invention decreases aspect ratio by selective removal of the metal hard mask before the metallization of the receiving structures without adverse damage to any existing metal or dielectric materials required to define the semiconductor device, e.g. copper metallurgy or device dielectric. Thus, an improved aspect ratio for metal fill without introducing any excessive trapezoidal cross-sectional character to the defined metal receiving structures of the device will result.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.