Ion sources and methods for generating an ion beam with controllable ion current density distribution
US8835869B2 · kind B2 · utility
8Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2012 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Sep 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24542
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Ion sources and methods for generating an ion bean with a controllable ion current density distribution. The ion source includes a discharge chamber having an optical grid position proximate at a first end and a re-entrant vessel positioned proximate a second end that opposes the first end. A plasma shaper extends from the re-entrant vessel and into the plasma discharge chamber. A position of the plasma shaper is adjustable relative to the grid-based ion optic such that the plasma shaper may operably change a plasma density distribution within the discharge chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.