Parallel shunt paths in thermally assisted magnetic memory cells

US8835889B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• David W. Abraham · New York, US
• John K. De Brosse · Colchester, US
• Philip L. Trouilloud · Norwood, US
• Daniel C. Worledge · Somers, US

Key dates

• Filing date: Mar 13, 2013
• Grant date: Sep 16, 2014
• Expiry date: Mar 13, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B61/00

Abstract

A thermally assisted magnetic memory cell device includes a substrate, a first electrode disposed on the substrate, a magnetic tunnel junction disposed on the first electrode, a second electrode disposed on the magnetic tunnel junction, a conductive hard mask disposed on the second electrode and a parallel shunt path coupled to the magnetic tunnel junction, thereby electrically coupling the first and second electrodes.