ReRAM cells including TaXSiYN embedded resistors
US8835890B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2013 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Dec 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and a resistive switching layer connected in series with this resistor. The resistor is configured to prevent over-programming of the cell by limiting electrical currents through the resistive switching layer. Unlike the resistive switching layer, which changes its resistance in order to store data, the embedded resistor maintains a substantially constant resistance during operation of the cell. The embedded resistor is formed from tantalum nitride and silicon nitride. The atomic ratio of tantalum and silicon may be specifically selected to yield resistors with desired densities and resistivities as well as ability to remain amorphous when subjected to various annealing conditions. The embedded resistor may also function as a diffusion barrier layer and prevent migration of components between one of the electrodes and the resistive switching layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.