Mihir Tendulkar
21Patents
5h-index
8Co-inventors
51Inventor score
Filing activity: Jan 19, 2012 → Dec 9, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8698119B2 | Nonvolatile memory device using a tunnel oxide as a current limiter element | Electricity | 9 | Active |
| US9231203B1 | Doped narrow band gap nitrides for embedded resistors of resistive random access memory cells | Electricity | 8 | Active |
| US8835890B2 | ReRAM cells including TaXSiYN embedded resistors | Electricity | 8 | Active |
| US9243321B2 | Ternary metal nitride formation by annealing constituent layers | Electricity | 7 | Active |
| US9276210B1 | Conductive barriers for ternary nitride thin-film resistors | Electricity | 6 | Active |
| US8686386B2 | Nonvolatile memory device using a varistor as a current limiter element | Electricity | 5 | Active |
| US8853661B1 | Metal aluminum nitride embedded resistors for resistive random memory access cells | Electricity | 4 | Active |
| US8847187B2 | Method of forming anneal-resistant embedded resistor for non-volatile memory application | Electricity | 1 | Active |
| US8860002B2 | Limited maximum fields of electrode-switching layer interfaces in Re-RAM cells | Electricity | 1 | Active |
| US8901530B2 | Nonvolatile memory device using a tunnel oxide as a passive current steering element | Electricity | 1 | Active |
| US8552413B2 | Nonvolatile memory device using a tunnel nitride as a current limiter element | Physics | 1 | Active |
| US8796103B2 | Forming nonvolatile memory elements by diffusing oxygen into electrodes | Electricity | 1 | Active |
| US8895949B2 | Nonvolatile memory device using a varistor as a current limiter element | Electricity | 1 | Active |
| US8735864B2 | Nonvolatile memory device using a tunnel nitride as a current limiter element | Physics | 1 | Active |
| US9178142B2 | Doped electrodes used to inhibit oxygen loss in ReRAM device | Electricity | 1 | Active |
| US8969129B2 | ReRAM cells including TaXSiYN embedded resistors | Electricity | 0 | Active |
| US8921154B1 | Method of forming anneal-resistant embedded resistor for non-volatile memory application | Electricity | 0 | Active |
| US8981329B1 | Method of forming anneal-resistant embedded resistor for non-volatile memory application | Electricity | 0 | Active |
| US9299926B2 | Nonvolatile memory device using a tunnel oxide layer and oxygen blocking layer as a current limiter element | Physics | 0 | Active |
| US9030018B2 | Test vehicles for evaluating resistance of thin layers | Electricity | 0 | Active |
| US9006696B2 | Metal aluminum nitride embedded resistors for resistive random memory access cells | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.