Silicon controlled rectifier with integral deep trench capacitor

US8841174B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• James P. Di Sarro · Allen, US
• Robert J. Gauthier, Jr. · South Burlington, US
• Tom C. Lee · South Burlington, US
• Junjun Li · Williston, US
• Souvick Mitra · South Burlington, US
• Chengwen Pei · Danbury, US
• Christopher S. Putnam · South Burlington, US
• Theodorus E. Standaert · Clifton Park, US

Key dates

• Filing date: Jul 1, 2013
• Grant date: Sep 23, 2014
• Expiry date: Jul 1, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/611

Abstract

Device structures and design structures that include a silicon controlled rectifier, as well as fabrication methods for such device structures. A well is formed in the device layer of a silicon-on-insulator substrate. A silicon controlled rectifier is formed that includes an anode in the well. A deep trench capacitor is formed that includes a plate coupled with the well. The plate of the deep trench capacitor extends from the device layer through a buried insulator layer of the silicon-on-insulator substrate and into a handle wafer of the silicon-on-insulator substrate.