MOCVD reactor having cylindrical gas inlet element
US8841221B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2009 |
| Grant date | Sep 23, 2014 |
| Priority date | — |
| Expiry date | Oct 20, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a device for depositing semiconductor layers, comprising a process chamber (1) arranged substantially rotationally symmetrically about a center (11), a susceptor (2), a process chamber ceiling (3), a gas inlet element (4) having gas inlet chambers (8, 9, 10) that are arranged vertically on top of each other, and a heater (27) arranged below the susceptor (2), wherein the topmost (8) of the gas inlet chambers is directly adjacent to the process chamber ceiling (3) and is connected to a feed line (14) for feeding a hydride together with a carrier gas into the process chamber (1), wherein the lowest (10) of the gas inlet chambers is directly adjacent to the susceptor (2) and is connected to a feed line (16) for feeding a hydride together with a carrier gas into the process chamber (1), wherein at least one center gas inlet chamber (9) arranged between the lowest (10) and the topmost (8) gas inlet chamber is connected to a feed line (15) for feeding an organometallic compound into the process chamber (1). According to the invention, the gas inlet chambers (8, 9, 10) are closed off toward the process chamber (1) by annular walls (22, 23, 24), wherein the annular…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.