Scalable, high-throughput, multi-chamber epitaxial reactor for silicon deposition

US8845809B2 · kind B2 · utility

Assignee

• Silevo, Inc. · US

Inventors

• Steve Poppe · Pleasanton, US
• Yan Rozenzon · Redwood City, US
• David Z. Chen · Shanghai, CN
• Xiaole Yan · Santa Clara, US
• Peijun Ding · San Jose, US
• Zheng Xu · Hangzhou City, CN

Key dates

• Filing date: Sep 9, 2009
• Grant date: Sep 30, 2014
• Expiry date: Jun 5, 2031

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B25/165
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

One embodiment provides an apparatus for material deposition. The apparatus includes a reaction chamber, and a pair of susceptors. Each susceptor has a front side mounting substrates and a back side. The front sides of the vertically positioned susceptors face each other, and the vertical edges of the susceptors are in contact with each other. The apparatus also includes a number of gas nozzles for injecting reaction gases. The gas flow directions inside the chamber can be alternated by controlling the gas nozzles. The gas nozzles are configured to inject a small amount of purge gas including at least one of: HCl, SiCl4, and H2 when the gas nozzles are not injecting reaction gas. The apparatus includes a number of heating units situated outside the reaction chamber. The heating units are arranged in such a way that they radiate heat energy directly to the back sides of the susceptors.