Electrode for plasma processes and method for manufacture and use thereof
US8845855B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2007 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Sep 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3255
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A silicon electrode for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out and a method of processing a semiconductor substrate with the electrode. The electrode is a low resistivity electrode having an electrical resistivity of less than 1 ohm-cm. The electrode can be a zero defect single crystal silicon or silicon carbide electrode such as a showerhead electrode bonded or clamped to support such as a temperature controlled plate or ring. The showerhead electrode can be in the form of a circular disk of uniform thickness and an elastomeric joint can be provided between a support ring and the electrode. The electrode can include gas outlets having 0.020 to 0.030 inch diameters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.