High efficiency thin film transistor device with gallium arsenide layer
US8846437B2 · kind B2 · utility
9Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2011 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Jun 28, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.