Forming inter-device STI regions and intra-device STI regions using different dielectric materials
US8846466B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2013 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Sep 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit structure includes a substrate having a first portion in a first device region and a second portion in a second device region; and two insulation regions in the first device region and over the substrate. The two insulation regions include a first dielectric material having a first k value. A semiconductor strip is between and adjoining the two insulation regions, with a top portion of the semiconductor strip forming a semiconductor fin over top surfaces of the two insulation regions. An additional insulation region is in the second device region and over the substrate. The additional insulation region includes a second dielectric material having a second k value greater than the first k value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.