Methods for depositing thin films comprising gallium nitride by atomic layer deposition

US8846502B2 · kind B2 · utility

Assignee

• ASM IP Holding B.V. · NL

Inventors

• Suvi Haukka · Helsinki, FI
• Viljami Pore · Helsinki, FI
• Antti Niskanen · Helsinki, FI

Key dates

• Filing date: Jun 29, 2012
• Grant date: Sep 30, 2014
• Expiry date: Aug 7, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0262
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Atomic layer deposition (ALD) processes for forming thin films comprising GaN are provided. In some embodiments, ALD processes for forming doped GaN thin films are provided. The thin films may find use, for example, in light-emitting diodes.